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电子材料与设备基础:经典量子世界入门 Fundamentals Of Electronic Materials And Devices: A Gentle Introduction To The Quantum-classical World

 

 

基本信息

Format Paperback | 348 pages

Dimensions 152.4 x 228.6 x 18.54mm | 467.2g

Publication date 28 Feb 2023

Publisher World Scientific Publishing Co Pte Ltd

Publication City/Country Singapore, Singapore

Language English

Edition Statement Reprint

ISBN10 9811266573

ISBN13 9789811266577

 

书籍信息仅供参考,具体以实物为准

 

 

 

书籍简介

在牛顿出现之前,罗马人就已经建造了经久不衰的桥梁,他们只是用机械和材料的工作知识武装自己。相比之下,今天的桥梁建设是一个涉及CAD工具、复合材料和声学成像的复杂企业。当技术被推向极限时,工作知识被证明是不够的,对核心物理原理的深入理解,包括宏观和微观,自上而下和自下而上,变得至关重要。我们发现我们今天在半导体设备技术方面处于类似的十字路口,对固态电子的工作知识已经不够了。面对令人望而却步的计算成本,以及芯片制造、器件扩展和全球供应链的放缓,半导体行业被迫探索其他平台,如二维材料、自旋电子学、模拟处理和量子工程。本书将自上而下的经典器件物理学与自下而上的量子传输结合在一起,为这种科学探索提供基础。对于初学的本科生和实习与实践的研究生、不熟悉器件工程的物理学家和未受过量子物理训练的工程师来说,这是一本实用的简易读物。本书只需具备大一数学的适度前提,就能通过量子物理学的关键概念、Matlab练习和原始作业快速开展工作,涵盖了从化学键到Hofstader蝴蝶、域壁到Chern绝缘体、太阳能电池到光电二极管、FinFETs到Majorana费米子的广泛主题。对于实践中的设备工程师,它提供了新的概念,如电阻量子,而对于实践中的量子物理学家,它提供了新的背景,如隧道晶体管。

 

The Romans built enduring bridges well before Newton came along, armed simply with a working knowledge of mechanics and materials. In contrast, today's bridge building is an elaborate enterprise involving CAD tools, composite materials and acoustic imaging. When technology is pushed to its limits, a working knowledge proves inadequate, and an in-depth understanding of core physical principles, both macroscopic and microscopic, top-down vs bottom-up, becomes essential.We find ourselves today at a similar crossroad in semiconductor device technology, where a working knowledge of solid state electronics is no longer enough. Faced with the prohibitive cost of computing and the slowdown of chip manufacturing, device scaling and the global supply chain, the semiconductor industry is forced to explore alternate platforms such as 2-D materials, spintronics, analog processing and quantum engineering.This book combines top-down classical device physics with bottom-up quantum transport in a single venue to provide the basis for such a scientific exploration. It is essential, easy reading for beginning undergraduate and practicing graduate students, physicists unfamiliar with device engineering and engineers untrained in quantum physics. With just a modest pre-requisite of freshman maths, the book works quickly through key concepts in quantum physics, Matlab exercises and original homeworks, to cover a wide range of topics from chemical bonding to Hofstader butterflies, domain walls to Chern insulators, solar cells to photodiodes, FinFETs to Majorana fermions. For the practicing device engineer, it provides new concepts such as the quantum of resistance, while for the practicing quantum physicist, it provides new contexts such as the tunnel transistor.

 

作者简介

 

 

阿维克-戈什是弗吉尼亚大学查尔斯-布朗电子与计算工程系和物理系的教授。他拥有俄亥俄州立大学的理论凝聚态物理学博士学位和普渡大学的电子工程博士后研究金。他也是美国国家科学基金会-产业大学多功能集成系统技术合作中心(MIST)的弗吉尼亚大学现场主任。戈什在计算纳米材料和设备物理学领域撰写了150多篇论文和一本书(《纳米电子学--分子观》,World Scientific 2016)。他在全球范围内做了150多次特邀演讲。他是物理学会(IOP)的研究员,IEEE的高级会员,并获得了IBM教师奖,美国国家科学基金会CAREER奖,陆军研究办公室的杰出论文奖,以及弗吉尼亚大学的全校教学奖。他的研究小组与哥伦比亚大学合作展示了石墨烯的负指数行为,被《物理世界》编辑评选为2016年十大研究突破之一。

 

 

 

Avik Ghosh is Professor at the Charles Brown Department of Electrical and Computing Engineering and the Department of Physics at the University of Virginia. He holds a PhD in theoretical condensed matter physics from the Ohio State University and a postdoctoral fellowship in Electrical Engineering from Purdue University. He is also the UVA site-director of the NSF-Industry University Cooperative Center on Multifunctional Integrated Systems Technology (MIST). Ghosh has authored 150 refereed papers and a book (Nanoelectronics — A Molecular View, World Scientific 2016) in the area of computational nanomaterials and device physics. He has given over 150 invited lectures worldwide. He is Fellow of the Institute of Physics (IOP), senior member of the IEEE, and has received the IBM Faculty Award, the NSF CAREER Award, a best paper award from the Army Research Office, and UVA's All University Teaching Award. His group's work with Columbia University on demonstrating negative index behavior in graphene was voted by the editors of Physics World as one of the top 10 research breakthroughs of 2016.

 

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